wpm1480 single p-channel, -20 v, -1.5 a,power mosfet absolute maximum ratings (ta=25 unless otherwise specified) 3 d u d p h w h u 6 \ p e r o 9 d o x h 8 q l w v v ds drain-source voltage -20 v v gs gate-source voltage 8 v i d continuous drain current a steady-state ta=25 -1.4 a steady-state ta=70 -1.1 t 0 5s ta=25 -1.5 i dm pulse drain current b tp=10us -3.0 a p d power dissipation b ta=25 0.29 w ta=70 0.19 t j operating junction temperature range -55~1 50 tstg storage temperature range order information description the wpm1480 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc conversion applications. standard product wpm1480 is pb-free. features 9 % 5 ' 6 6 5 ' 6 r q 7 \ s 20 v 110 m ? @ 4.5 v 150 m ? @ 2.5 v application li-ion battery charging high side dc-dc conversion circuits high side drive for small brushless dc motors power management in portable, battery powered products 3 d u w 1 x p e h u 3 d u w 1 x p e h u 6 k l s s l q j wpm1480-3/tr sot-323/sc-70 3000tape&reel sc?70/sot?323 2 1 3 s g d p?channel mosfet ts = specific device code m = date code ts m 1 2 3 gate source drain 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics off on dynamic switching source drain diode symbol parameter test conditions min. typ. max. units bv dss drain-source voltage i d =-250a, v gs =0v -20 v t c =25 -1 a i dss zero gate voltage drain current v ds = -16v, v gs =0v t c =55 -5 a i gss gate-body leakage current v ds =0v, v gs = f 8v 100 na symbol parameter test conditions min. typ. max. units v gs(th) gate threshold voltage v ds =v gs , i d =-250 - a -0.4 -0.6 -1.0 v v gs = -4.5v, i d v gs = -2.5v, i d r ds(on) static drain-source on resistance v gs = -1.8v, i d symbol parameter test conditions min. typ. max. units g fs transconductance v ds = -10v, i d = -1a 4 6 s c iss input capacitance 480 pf c oss output capacitance 58 pf c rss reverse transfer capacitance v ds = -10v, v gs =0v, f=1mhz 51 pf r g gate resistance v ds =0v, v gs =0v, f=1mhz 12 symbol parameter test conditions min. typ. max. units q g total gate charge 6.5 nc q gs gate source charge 0.3 nc q gd gate drain charge v gs = -4.5v, i d = -1. 2 a, v ds = -10v 0.7 nc t d(on) turn-on delay time 8.0 ns t r turn-on rise time 6.0 ns t d(off) turn-off delay time 42 ns t f turn-off fall time v gs = -4.5v, v d s = -1 0 v, i d = -1. 2 a, r gen = 6 7.0 ns symbol parameter test conditions min. typ. max. units v sd diode forward voltage i s = -1a, v gs =0v i s maximum body-diode continuous current -1 a t rr body-diode reverse recovery time 30 ns q rr body-diode reverse recovery charge i s = -1.0a, di/dt=100a/s 12 nc = - 1 .0a 110 255 = - 0.5 a 150 355 = - 0.3 a 190 405 m m m -0.79 -1.5 v wpm1480 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical performance characteristis ?2 v 100 c 0 4 5 3 6 3 2 ?v ds , drain?to?source voltage (volts) ?i d, drain current (amps) 2 1 0 1 figure 1. on?region characteristics 0.5 4 2 1.5 2.5 3 2 1 1 0 3 figure 2. transfer characteristics ?v gs , gate?to?source voltage (volts) ?i d, drain current (amps) t j = 25 c t c = ?55 c 4 25 c ?1.2 v ?1.4 v ?1.6 v ?1.8 v 78 ?2.2 v v ds ?10 v v gs = ?2.4 v v gs = ?6 v to ?3 v thermal characteristic symbol parameter typ. max. unit. t 5s 250 375 /w r ja junction to ambient a steady-state 345 430 /w r jl junction to lead c steady-state 80 100 /w a: surfacemounted on fr4 board using 1 s sq pad size (cu area = 1.127 in sq [1 oz] including traces). b: repetitive rating, pulse width limited by junction temperature. c: the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient 0.1 35 0.3 0.2 0 figure 3. on?resistance vs. gate?to?source voltage ?v gs , gate?to?source voltage (volts) r ds(on), drain?to?source resistance ( ) 0.5 24 i d = ?1.0 a t j = 25 c 16 0.4 figure 4. on?resistance vs. drain current and gate voltage ?i d, drain current (amps) r ds(on), drain?to?source resistance ( ) 0.075 0.1 0.125 0.15 0.175 0.2 0.5 1.5 2.5 3.5 0.225 t j = 25 c v gs = ?4.5 v v gs = ?2.5 v wpm1480 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0 1 2 3 4 5 01234 3 6 9 12 15 0 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge 0.9 0.5 0 ?v sd , source?to?drain voltage (v) figure 10. diode forward voltage vs. current ?i s , source current (amps) v gs = 0 v t j = 25 c 2.5 0.7 0.5 0.3 1 1.5 2 0 1 2 3 4 5 ?v gs q g , total gate charge (nc) ?v gs, gate?to?source voltage (v) i d = ?1.0 a t j = 25 c ?v ds, drain?to?source voltage (v) q gd q gs ?v ds q t ?50 0 ?25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on?resistance variation with temperature ?t j , junction temperature ( c) 75 150 i d = ?1.0 a v gs = ?4.5 v r ds(on), drain?to?source resistance (normalized) 1.6 24 8 10 20 16 figure 6. drain?to?source leakage current vs. voltage ?v ds , drain?to?source voltage (volts) 12 v gs = 0 v ?i dss , leakage (na) t j = 150 c t j = 100 c 100 1000 10000 610 18 14 r g , gate resistance ( ) figure 9. resistive switching time variation vs. gate resistance t, time (ns) 1 10 100 1000 1 10 100 t d(off) t d(on) t f t r v dd = ?10 v i d = ?1.2 a v gs = ?4.5 v 0 5 10 15 20 0 150 300 450 600 crss coss ciss v gs =0v f=1mhz c-capacitance(pf) -v ds -drain-to-source voltage(v) wpm1480 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
>?
#q ': b p? ? & #?p 9,$y?g- _7 g
?:g?1?>?m?,$y??
#q ': ? & j? +e kp
? ? 1 ? ? t 2.5 mm f ? 1 ? ? 0 t 350 mm 3 ? 1 ? ? < 2.5 mm d ? 1 ? ? 0 < 350 mm 3 $y?: wfo) 3 c/second max. n' $y? - ~$y (ts(min)) - q$y m(ts(ax)) - &l$ ( ~$y`q$y )(ts) 150 c 200 c 60-180 seconds tn' $y? ts(max) `5$ 1$y? tl - $y wfo) 3 c/second max. time maintained above: - $y? (tl) - &l$ (tl) 217 c 60-150 seconds # $y? (tp) 245+0/-5 c 260+0/-5 c 5$1
x# $y?, &l$ temperature (tp) 10-30seconds 20-40seconds l}$yfo) 6 c/second max. t 25 a c `# $y?, &l$ 8 minutes max. welding temperature curve wpm1480 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
packaging information sot-323/sc-70 package outline dimension style 8: pin 1. gate 2. source 3. drain c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 soldering footprint wpm1480 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
